Datasheet > AO4407_10

AO4407_10

更新时间： 2024-09-10 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	537K
描述
30V P-Channel MOSFET

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AO4407_10 数据手册

AO4407

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4407 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=-20V)

R_DS(ON)(at V_GS=-20V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-5V)

-12A

< 13mΩ

< 14mΩ

< 30mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

T_A=25°C

T_A=70°C

-12

Continuous Drain

Current

I_D

-10

Pulsed Drain Current ^C

I_DM

-60

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

101

Avalanche energy L=0.3mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 13: July 2010

www.aosmd.com

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与AO4407_10相关器件

型号	品牌	获取价格	描述	数据表
AO4407A	FREESCALE	获取价格	30V P-Channel MOSFET
AO4407A	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO4407A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
AO4407A (KO4407A)	KEXIN	获取价格	P-Channel MOSFET
AO4407A_10	AOS	获取价格	30V P-Channel MOSFET
AO4407AL	AOS	获取价格	Transistor
AO4407L	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO4408	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO4408	ALPHA	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO4408	FREESCALE	获取价格	N-Channel 30-V (D-S) MOSFET High performance trench technology