Datasheet > AO4410L

AO4410L

更新时间： 2024-11-18 03:45:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	108K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO4410L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AO4410L 数据手册

AO4410

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4410 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity,

body diode characteristics and ultra-low gate

resistance. This device is ideally suited for use as a

low side switch in Notebook CPU core power

conversion. Standard product AO4410 is Pb-free

(meets ROHS & Sony 259 specifications). AO4410L

is a Green Product ordering option. AO4410 and

AO4410L are electrically identical.

V_DS(V) = 30V

I_D= 18A

(V_GS= 10V)

R_DS(ON)< 5.5mΩ (V_GS= 10V)

R_DS(ON)< 6.2mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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