Datasheet > AO4410_10

AO4410_10

更新时间： 2024-09-10 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	185K
描述
30V N-Channel MOSFET

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AO4410_10 数据手册

AO4410

30V N-Channel MOSFET

General Description

Product Summary

The AO4410 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity,

body diode characteristics and ultra-low gate

resistance. This device is ideally suited for use as a

low side switch in Notebook CPU core power

conversion.

V_DS(V) = 30V

I_D= 18A

(V_GS= 10V)

R_DS(ON)< 5.5mΩ (V_GS= 10V)

_DS(ON)< 6.2mΩ (V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±12

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

Avalanche Current ^B

2.1

°C

I_AR

Repetitive avalanche energy 0.3mH ^B

E_AR

135

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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