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AO4411_11 PDF预览

AO4411_11

更新时间: 2024-10-30 12:51:27
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 614K
描述
30V P-Channel MOSFET

AO4411_11 数据手册

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AO4411  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-30V  
The AO4411 uses advanced trench technology to provide  
excellent RDS(ON), and ultra-low low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications.  
ID (at VGS=-10V)  
RDS(ON) (at VGS=-10V)  
-8A  
< 32m  
< 55mΩ  
RDS(ON) (at VGS = -4.5V)  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
-8  
Continuous Drain  
Current  
ID  
-6.6  
A
Pulsed Drain Current C  
IDM  
-40  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
23  
A
Avalanche energy L=0.1mH C  
TA=25°C  
Power Dissipation B  
26  
3.1  
mJ  
PD  
W
°C  
TA=70°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Rev 11: Nov 2011  
www.aosmd.com  
Page 1 of 6  

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