Datasheet > AO4411

AO4411

更新时间： 2024-11-18 12:52:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	404K
描述
P-Channel 30-V (D-S) MOSFET High power and current handling capability

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AO4411 数据手册

AO4411/ MC4411

Freescale

P-Channel 30-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(

Ω

)

I_D(A)

9.5

30 @ V_GS= -10V

52 @ V_GS= -4.5V

-30

7.5

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

Extended VGS range (±25) for battery pack

applications

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parame ter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

±25

T_A=25^oC

T_A=70^oC

9.5

8.3

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

±50

-2.1

3.1

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

2.6

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum Units

Maximum Junction-

o-Case^a

o-Amb

ent^a

^oC/W

t <= 5 sec

R_θJC

R_θJA

Maximum Junction-

t <= 10 sec

^oC/W

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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