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AO4408 PDF预览

AO4408

更新时间: 2024-09-09 22:05:43
品牌 Logo 应用领域
阿尔法 - ALPHA 晶体晶体管
页数 文件大小 规格书
5页 123K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4408 数据手册

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Rev 3: June 2004  
AO4408, AO4408L (Green Product)  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4408 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and fast  
switching. This device makes an excellent high side  
switch for notebook CPU core DC-DC conversion.  
AO4408L(Green Product) is offered in a lead-free  
package.  
VDS (V) = 30V  
ID = 12A  
R
DS(ON) < 13m(VGS = 10V)  
RDS(ON) < 16m(VGS = 4.5V)  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
V
A
TA=25°C  
TA=70°C  
12  
ID  
10  
Pulsed Drain Current B  
Avalanche Current B,E  
Repetitive Avalanche Energy B,E L=0.1mH  
IDM  
IAV  
EAV  
80  
A
30  
100  
mJ  
TA=25°C  
3
PD  
W
Power Dissipation  
TA=70°C  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
23  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
48  
65  
RθJL  
12  
16  
Alpha & Omega Semiconductor, Ltd.  

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