Datasheet > AO4413

AO4413

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	613K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-15A;Vgs(th)(V):±25;漏源导通电阻:8.5mΩ@-10V

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AO4413 数据手册

AO4413

UMW

-30V P-Channel MOSFET

General Description

The AO4413 provide excellent R_DS(ON), and ultra-low

low gate charge with a 25V gate rating. This device

is suitable for use as a load switch or in PWM appli-

cations.

Product Summary

•

VDS (V) = -30V

(V_GS= -10V)

•

ID = -15A

RDS(ON) ＜

Ω(V

=-10V)

8.5m

Ω(V

•

=-4.5V)

RoHS and Halogen-Free Compliant

Absolute Maximum Ratings _{T =25 C unless otherwise noted}

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±25

-15

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

I_D

-12.8

-120

I_DM

I_AS, I_AR

E_AS, E_AR

125

3.1

P_D

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

t ≤ 10s

R_θJA

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

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