Datasheet > AO4409_11

AO4409_11

更新时间： 2024-09-10 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	254K
描述
30V P-Channel MOSFET

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AO4409_11 数据手册

AO4409

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4409 uses advanced trench technology to provide

excellent R_DS(ON), and ultra-low low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

I_D(at V_GS=-10V)

-15A

_DS(ON)(at V_GS=-10V)

< 7.5mΩ

< 12mΩ

R_DS(ON)(at V_GS=-4.5V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-15

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

-12.8

-80

I_DM

I_AS, I_AR

E_AS, E_AR

135

Avalanche energy L=0.3mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

3.1

P_D

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 7: Feb. 2011

www.aosmd.com

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