Datasheet > AO4409

AO4409

更新时间： 2024-09-11 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	593K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-15A;Vgs(th)(V):±20;漏源导通电阻:7.5mΩ@-10V

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AO4409 数据手册

UMW

AO4409

P-Channel MOSFET

General Description

The AO4409 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge. This device is suitable for use as a load

switch or in PWM applications.

Features

V_DS(V) = -30V

I_D= -15 A

Max R_DS(ON)< 7.5mΩ (V_GS= -10V)

Max R_DS(ON)< 12mΩ (V_GS= -4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

-15

-12.8

-80

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

2.1

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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与AO4409相关器件

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