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AO4410

更新时间: 2024-09-10 03:45:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 108K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4410 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.55
Base Number Matches:1

AO4410 数据手册

 浏览型号AO4410的Datasheet PDF文件第2页浏览型号AO4410的Datasheet PDF文件第3页浏览型号AO4410的Datasheet PDF文件第4页 
AO4410  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4410 uses advanced trench technology to  
provide excellent RDS(ON), shoot-through immunity,  
body diode characteristics and ultra-low gate  
resistance. This device is ideally suited for use as a  
low side switch in Notebook CPU core power  
conversion. Standard product AO4410 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4410L  
is a Green Product ordering option. AO4410 and  
AO4410L are electrically identical.  
VDS (V) = 30V  
ID = 18A  
(VGS = 10V)  
RDS(ON) < 5.5m(VGS = 10V)  
RDS(ON) < 6.2m(VGS = 4.5V)  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
V
A
TA=25°C  
TA=70°C  
18  
ID  
15  
Pulsed Drain Current B  
IDM  
80  
3
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  

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