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AO4412

更新时间: 2024-09-13 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 142K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4412 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):8.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

AO4412 数据手册

 浏览型号AO4412的Datasheet PDF文件第2页浏览型号AO4412的Datasheet PDF文件第3页浏览型号AO4412的Datasheet PDF文件第4页 
AO4412  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4412 uses advanced trench technology to  
provide excellent RDS(ON) and ultra low gate charge for  
use has a fast high side switch. The source leads are  
separated to allow a Kelvin connection to the source,  
which may be used to bypass the source  
VDS (V) = 30V  
ID = 8.5A  
(VGS = 10V)  
RDS(ON) < 26m(VGS = 10V)  
RDS(ON) < 34m(VGS = 4.5V)  
inductance.Standard product AO4412 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4412L  
is a Green Product ordering option. AO4412 and  
AO4412L are electrically identical.  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
V
A
TA=25°C  
TA=70°C  
8.5  
ID  
7.1  
Pulsed Drain Current B  
IDM  
60  
3
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  

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