Datasheet > AO4411

AO4411

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	418K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-18A;Vgs(th)(V):±12;漏源导通电阻:32mΩ@-10V

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AO4411 数据手册

UMW

AO4411

30V P-Channel MOSFET

General Description

The AO4411 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge. This device is suitable for use as a load

switch or in PWM applications.

Product Summary

V_DS

-30V

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS= -4.5V)

-8A

< 32mΩ

< 55mΩ

SOP-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

T_A=25°C

T_A=70°C

-8

-6.6

I_D

Pulsed Drain Current ^B

I_DM

-40

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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与AO4411相关器件

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