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AO4411

更新时间: 2024-11-18 00:04:23
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 118K
描述

AO4411 技术参数

生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.76配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):135 pFJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO4411 数据手册

 浏览型号AO4411的Datasheet PDF文件第2页浏览型号AO4411的Datasheet PDF文件第3页浏览型号AO4411的Datasheet PDF文件第4页 
AO4411  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4411 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge. This device is suitable for use as a load  
switch or in PWM applications. Standard Product  
AO4411 is Pb-free (meets ROHS & Sony 259  
specifications). AO4411L is a Green Product  
ordering option. AO4411 and AO4411L are  
electrically identical.  
VDS (V) = -30V  
ID = -8 A (VGS = -10V)  
R
DS(ON) < 32m(VGS = -10V)  
DS(ON) < 55m(VGS = -4.5V)  
R
D
S
SOIC-8  
Top View  
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
-8  
-6.6  
ID  
Pulsed Drain Current B  
IDM  
-40  
TA=25°C  
TA=70°C  
3
PD  
W
Power Dissipation A  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
24  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
54  
75  
RθJL  
21  
30  
Alpha & Omega Semiconductor, Ltd.  

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