AO4413L

更新时间： 2024-11-17 13:05:35

品牌	Logo	应用领域
美国万代 - AOS		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
6页	567K
描述
Transistor

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中文翻译

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技术参数
数据手册

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AO4413L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

AO4413L 数据手册

AO4413

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4413 uses advanced trench technology to provide

excellent R_DS(ON), and ultra-low low gate charge with a

25V gate rating. This device is suitable for use as a load

switch or in PWM applications.

I_D(at V_GS=-20V)

-15A

_DS(ON)(at V_GS=-20V)

< 7mΩ

< 8.5mΩ

R_DS(ON)(at V_GS= -10V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

T_A=25°C

T_A=70°C

-15

Continuous Drain

Current

I_D

-12.8

Pulsed Drain Current ^C

I_DM

-120

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

125

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 9: Jan 2010

www.aosmd.com

Page 1 of 6

12 3 4 5 6

中文翻译

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