Datasheet > AO4407A

AO4407A

更新时间： 2024-09-11 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	631K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-14A;Vgs(th)(V):±25;漏源导通电阻:11.5mΩ@-10V

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AO4407A 数据手册

UMW

AO4407A

P-Channel MOSFET

General Description

• Latest Advanced Trench Technology

• Low R_DS(ON)

• High Current Capability

• RoHS and Halogen-Free Compliant

Product Summary

V_DS

-30V

-14A

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

< 11.5mΩ

< 18.5mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

T_A=25°C

T_A=70°C

-14

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

Avalanche energy

I_D

-11

I_DM

I_AS

-56

-33

L=0.1mH

T_A=25°C

T_A=70°C

E_AS

3.1

P_D

Power Dissipation ^B

2.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_qJA

Maximum Junction-to-Ambient ^{A D}Steady-State

Maximum Junction-to-Lead

Steady-State

R_qJL

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与AO4407A相关器件

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