Datasheet > AO4407A_10

AO4407A_10

更新时间： 2024-11-18 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	192K
描述
30V P-Channel MOSFET

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AO4407A_10 数据手册

AO4407A

30V P-Channel MOSFET

General Description

Product Summary

The AO4407A uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate charge

with a 25V gate rating. This device is suitable for use as

a load switch or in PWM applications.

V_DS= -30V

I_D= -12A

R_DS(ON)< 11mꢀ (V_GS= -20V)

R_DS(ON)< 13mꢀ (V_GS= -10V)

(V_GS= -20V)

_DS(ON)< 17mꢀ (V_GS= -6V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

-30

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^G

V_GS

±25

-12

T_A=25°C

T_A=70°C

I_D

-10

I_DM

I_AR

E_AR

-60

-26

Repetitive avalanche energy L=0.3mH ^G

101

T_A=25°C

3.1

Power Dissipation ^A

T_A=70°C

P_D

2.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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