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AO4408 PDF预览

AO4408

更新时间: 2024-11-30 12:51:27
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 171K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4408 数据手册

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AO4408  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4408/L uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and fast  
switching. This device makes an excellent high side  
switch for notebook CPU core DC-DC conversion.  
AO4408 and AO4408L are electrically identical.  
-RoHS Compliant  
VDS (V) = 30V  
ID = 12A  
(VGS = 10V)  
R
DS(ON) < 13m(VGS = 10V)  
RDS(ON) < 16m(VGS = 4.5V)  
UIS Tested  
-AO4408L is Halogen Free  
Rg,Ciss,Coss,Crss Tested  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current AF  
±12  
V
A
TA=25°C  
TA=70°C  
12  
ID  
10  
Pulsed Drain Current B  
Avalanche Current B  
Repetitive Avalanche Energy B L=0.3mH  
IDM  
IAV  
EAV  
80  
A
30  
135  
mJ  
TA=25°C  
3
PD  
W
Power Dissipation  
TA=70°C  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
23  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
48  
65  
RθJL  
12  
16  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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