Datasheet > 晶体管 > 功率场效应晶体管> XP133A1330SR

XP133A1330SR

更新时间： 2024-09-19 03:13:59

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	445K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册

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XP133A1330SR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

XP133A1330SR 数据手册

XP133A1330SR

ETR1113_001

Power MOSFET

■GENERAL DESCRIPTION

The XP133A1330SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics. Two FET devices are built into the one package

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance

Rds(on)= 0.03

Rds(on)= 0.04

Rds(on)= 0.07

(Vgs = 4.5V)

(Vgs = 2.5V)

(Vgs = 1.5V)

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Driving Voltage

: 1.5V

N-Channel Power MOSFET

DMOS Structure

Two FET Devices Built-in

Package

: SOP-8

■PIN CONFIGURATION

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

Source

Gate

Source

Gate

Drain

5~6

7~8

■

ABSOLUTE MAXIMUM RATINGS

■EQUIVALENT CIRCUIT

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

±8

Idp

Idr

Channel Power Dissipation *

Channel Temperature

℃

Tch

150

Storage Temperature Range Tstg

-55~150

* When implemented on a glass epoxy PCB

1/5

12 3 4 5

中文翻译

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