Datasheet > 晶体管 > 功率场效应晶体管> XP134A11A1SR

XP134A11A1SR

更新时间： 2024-09-18 21:53:43

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	63K
描述
P-Channel Power MOS FET

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中文翻译

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技术参数
数据手册

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XP134A11A1SR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

XP134A11A1SR 数据手册

Power MOS FET

XP134A11A1SR

ꢀ Applications

ꢀꢀP-Channel Power MOS FET

ꢀꢀDMOS Structure

ꢀꢀLow On-State Resistance: 0.11Ω MAX

ꢀꢀUltra High-Speed Switching

ꢀꢀSOP-8 Package

ꢀꢀNotebook PCs

ꢀꢀCellular and portable phones

ꢀꢀOn-board power supplies

ꢀꢀLi-ion battery systems

ꢀꢀTwo FET Devices built-in

ꢀ General Description

The XP134A11A1SR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Two FET devices are built into the one package.

ꢀ Features

Low on-state resistance: Rds(on)=0.065Ω(Vgs=-10V)

Rds(on)=0.11Ω(Vgs=-4.5V)

Ultra high-speed switching

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Operational Voltage: -4.5V

High density mounting: SOP-8

The small SOP-8 package makes high density mounting possible.

ꢀ Pin Configuration

ꢀ Pin Assignment

NUMBER

NAME

FUNCTION

Source

Gate

Source

Gate

5~6

7~8

Drain

SOP-8

(TOP VIEW)

ꢀ Absolute Maximum Ratings

ꢀ Equivalent Circuit

Ta=25

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

-30

±20

-4

Drain Current (Pulse)

Reverse Drain Current

Idp

-16

-4

Idr

Continuous Channel

Power Dissipation (note)

P-Channel MOS FET

(2 devices built-in)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

429

12 3 4

中文翻译

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