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XP135A1145SR PDF预览

XP135A1145SR

更新时间: 2024-11-07 21:54:59
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
5页 68K
描述
POWER MOSFET

XP135A1145SR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.81湿度敏感等级:1
Base Number Matches:1

XP135A1145SR 数据手册

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Power MOS FET  
XP135A1145SR  
N-Channel/P-Channel Power MOS FET  
DMOS Structure  
■�  
Applications  
●�Notebook PCs  
●�Cellular and portable phones  
●�On - board power supplies  
Low On-State Resistance : 0.045  
max (Nch)  
max (Pch)  
0.110  
Ultra High-Speed Switching  
SOP - 8 Package  
Two FET Devices Built-in  
General Description  
Features  
Low on-state resistance (Nch) :  
The XP135A1145SR is a N-Channel/P-Channel Power MOS FET  
with low on-state resistance and ultra high-speed switching  
characteristics.  
Rds (on) = 0.033( Vgs = 10V )  
Rds (on) = 0.045( Vgs = 4.5V )  
Low on-state resistance (Pch) :  
Two FET devices are built-into the one package.  
Because high-speed switching is possible, the IC can be efficiently  
set thereby saving energy.  
Rds (on) = 0.065( Vgs = -10V )  
Rds (on) = 0.110( Vgs = -4.5V )  
Ultra high-speed switching  
The small SOP-8 package makes high density mounting possible.  
Operational Voltage : 4.5V (Nch) : -4.5V (Pch)  
High density mounting : SOP - 8  
Pin Configuration  
Pin Assignment  
u
FUNCTION  
Source (Nch)  
Gate (Nch)  
Source (Pch)  
Gate (Pch)  
Drain (Pch)  
Drain (Nch)  
PIN NUMBER  
PIN NAME  
D1  
D1  
S1  
G1  
S2  
1
2
3
8
7
1
2
S1  
G1  
S2  
G2  
D2  
D1  
6
5
D2  
D2  
3
4
4
G2  
5 - 6  
7 - 8  
SOP - 8 Top View  
Equivalent Circuit  
Absolute Maximum Ratings  
O
Ta=25 C  
RATINGS  
SYMBOL  
UNITS  
PARAMETER  
1�  
2�  
8�  
7�  
Nch  
Pch  
30  
±20  
6
- 30  
±20  
- 4  
Drain - Source Voltage  
Gate - Source Voltage  
Drain Current (DC)  
Vdss  
Vgss  
Id  
V
V
A
3�  
4�  
6�  
5�  
20  
6
- 16  
- 4  
Drain Current (Pulse)  
Reverse Drain Current  
Continuous Channel  
Idp  
Idr  
Pd  
A
A
W
2
Power Dissipation (note)  
Channel Temperature  
Storage Temperature  
N-Channel/P - Channel MOS FET  
( 2 devices built-in )  
O
150  
C
Tch  
O
- 55 to 150  
C
Tstg  
( note ) : When implemented on a glass epoxy PCB  
437  

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