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XP151A11B0MR PDF预览

XP151A11B0MR

更新时间: 2024-09-18 22:27:07
品牌 Logo 应用领域
特瑞仕 - TOREX 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 140K
描述
POWER MOS FET

XP151A11B0MR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
配置:Single最大漏极电流 (Abs) (ID):1 A
FET 技术:METAL-OXIDE SEMICONDUCTOR湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.5 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

XP151A11B0MR 数据手册

 浏览型号XP151A11B0MR的Datasheet PDF文件第2页浏览型号XP151A11B0MR的Datasheet PDF文件第3页浏览型号XP151A11B0MR的Datasheet PDF文件第4页 
11S_29XP151A11B0MR 02.9.12 4:07 PM ページ 802  
Power MOS FET  
NN-Channel Power MOS FET  
NDMOS Structure  
■Applications  
GNotebook PCs  
GCellular and portable phones  
GOn-board power supplies  
GLi-ion battery systems  
NLow On-State Resistance : 0.17(max)  
NUltra High-Speed Switching  
NGate Protect Diode Built-in  
NSOT-23 Package  
■General Description  
■Features  
The XP151A11B0MR is an N-Channel Power MOS FET with low on-  
state resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently set  
thereby saving energy.  
Low on-state resistance : Rds (on) = 0.12( Vgs = 10V )  
: Rds (on) = 0.17( Vgs = 4.5V )  
Ultra high-speed switching  
Gate Protect Diode Built-in  
In order to counter static, a gate protect diode is built-in.  
The small SOT-23 package makes high density mounting possible.  
Operational Voltage  
: 4.5V  
High density mounting : SOT-23  
■Pin Configuration  
■Pin Assignment  
D�  
3�  
PIN NUMBER  
PIN NAME  
FUNCTION  
G�  
S�  
D�  
1
2
3
Gate  
Source  
Drain  
2�  
S�  
1
G�  
SOT-23�  
(TOP VIEW)�  
■Equivalent Circuit  
■Absolute Maximum Ratings  
11  
O
Ta=25 C  
3�  
SYMBOL  
RATINGS  
UNITS  
PARAMETER  
Drain - Source Voltage  
Gate - Source Voltage  
Drain Current (DC)  
Vdss  
Vgss  
Id  
30  
+ 20  
1A  
V
V
Drain Current (Pulse)  
Reverse Drain Current  
Continuous Channel  
Idp  
Idr  
Pd  
4
A
1A  
0.5  
2�  
1
W
Power Dissipation (note)  
Channel Temperature  
Storage Temperature  
O
C
Tch  
150  
O
N-Channel MOS FET�  
(1 device built-in)  
Tstg  
-55 ~ 150  
C
( note ) : When implemented on a ceramic PCB  
802  

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