Datasheet > XP152A11E5MR_12

XP152A11E5MR_12

更新时间： 2024-11-08 12:34:51

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	306K
描述
Power MOSFET

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中文翻译

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数据手册

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XP152A11E5MR_12 数据手册

XP152A11E5MR-G

ETR1120_003

Power MOSFET

■GENERAL DESCRIPTION

The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on) = 0.25

@ Vgs = -10V

@ Vgs = -4.5V

Ultra High-Speed Switching

Gate Protect Diode Built-in

Rds(on) = 0.45

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Driving Voltage

: -4.5V

P-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PRODUCT NAMES

MARKING

PRODUCTS

XP152A11E5MR

XP152A11E5MR-G^(*)

PACKAGE

SOT-23

ORDER UNIT

3,000/Reel

G：Gate

SOT-23

3,000/Reel

S：Source

D：Drain

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

* x represents production lot number.

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

-30

±20

-0.7

Idp

-2.8

Idr

-0.7

Channel Power Dissipation *

Channel Temperature

Storage Temperature

0.5

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

1/5

12 3 4 5

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