Datasheet > XP152A12C0MR

XP152A12C0MR

更新时间： 2024-09-19 12:31:03

品牌	Logo	应用领域
TYSEMI		二极管开关栅电话
页数	文件大小	规格书
2页	351K
描述
Cellular and portable phones Ultra High-Speed Switching Gate Protect Diode Built-in

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XP152A12C0MR 数据手册

Product specification

XP152A12C0MR-G

Power MOSFET

■GENERAL DESCRIPTION

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on) = 0.3

@ Vgs = -4.5V

@ Vgs = -2.5V

Rds(on) = 0.5

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Gate Protect Diode Built-in

Driving Voltage

: -2.5V

P-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PIN ASSIGNMENT

MARKING

PRODUCTS

XP152A12C0MR

XP152A12C0MR-G^(*)

PACKAGE

ORDER UNIT

3,000/Reel

SOT-23

G：Gate

SOT-23

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

S：Source

D：Drain

* x represents production lot number.

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

■EQUIVALENT CIRCUIT

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

-20

±12

-0.7

Drain Current (Pulse)

Reverse Drain Current

Channel Power Dissipation *

Channel Temperature

Storage Temperature

Idp

-2.8

Idr

-0.7

0.5

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

中文翻译

下载PDF

与XP152A12C0MR相关器件

型号	品牌	获取价格	描述	数据表
XP152A12C0MR_1	TOREX	获取价格	Power MOSFET
XP152A12C0MR_12	TOREX	获取价格	Power MOSFET
XP152A12C0MR-12	TOREX	获取价格	Power MOSFET
XP152A12C0MR-G	TOREX	获取价格	Power MOSFET
XP152A12C0MR-G	TYSEMI	获取价格	Cellular and portable phones Ultra High-Speed Switching Gate Protect Diode Built-in
XP152A12COMR	TOREX	获取价格	Power MOS FET
XP152A12COMR	HTSEMI	获取价格	20 V P-Channel Enhancement Mode MOSFET
XP1554	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XP1601	PANASONIC	获取价格	Silicon PNP(PNP) epitaxial planer transistor
XP1601TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon