Datasheet > XP151A13A0MR

XP151A13A0MR

更新时间： 2024-11-10 12:03:51

品牌	Logo	应用领域
TYSEMI		开关电话
页数	文件大小	规格书
2页	345K
描述
Cellular and portable phones On-board power supplies Ultra High-Speed Switching

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XP151A13A0MR 数据手册

Product specification

XP151A13A0MR-G

Power MOSFET

■GENERAL DESCRIPTION

The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V

Rds(on) = 0.14

Rds(on) = 0.25

@ Vgs = 2.5V

@ Vgs = 1.5V

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Gate Protect Diode Built-in

Driving Voltage

: 1.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

MARKING

■PRODUCT NAMES

PRODUCTS

XP151A13A0MR

XP151A13A0MR-G^(*)

PACKAGE

SOT-23

ORDER UNIT

3,000/Reel

G：Gate

1 3

SOT-23

3,000/Reel

S：Source

D：Drain

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

* x represents production lot number.

■EQUIVALENT CIRCUIT

■ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

±8

Idp

Idr

Channel Power Dissipation *

Channel Temperature

Storage Temperature

0.5

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

http://www.twtysemi.com

sales@twtysemi.com

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