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XP151A12A2MR PDF预览

XP151A12A2MR

更新时间: 2024-09-18 22:26:39
品牌 Logo 应用领域
特瑞仕 - TOREX /
页数 文件大小 规格书
4页 57K
描述
Power MOS FET

XP151A12A2MR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.72配置:Single
最大漏极电流 (Abs) (ID):1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.5 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

XP151A12A2MR 数据手册

 浏览型号XP151A12A2MR的Datasheet PDF文件第2页浏览型号XP151A12A2MR的Datasheet PDF文件第3页浏览型号XP151A12A2MR的Datasheet PDF文件第4页 
Power MOS FET  
XP151A12A2MR  
N-Channel Power MOS FET  
DMOS Structure  
■�Applications  
●�Notebook PCs  
●�Cellular and portable phones  
●�On - board power supplies  
●�Li - ion battery systems  
Low On-State Resistance : 0.1  
(max)  
Ultra High-Speed Switching  
Gate Protect Diode Built-in  
SOT - 23 Package  
General Description  
Features  
The XP151A12A2MR is a N-Channel Power MOS FET with low on  
state resistance and ultra high-speed switching characteristics.  
Because high-speed switching is possible, the IC can be efficiently  
set thereby saving energy.  
Rds (on) = 0.1 ( Vgs = 4.5V )  
Low on-state resistance :  
Rds (on) = 0.16( Vgs = 2.5V )  
Ultra high-speed switching  
Gate Protect Diode Built-in  
In order to counter static, a gate protect diode is built-in.  
The small SOT-23 package makes high density mounting possible.  
2.5V  
Operational Voltage :  
High density mounting :  
SOT - 23  
Pin Configuration  
Pin Assignment  
u
D
3
FUNCTION  
Gate  
PIN NUMBER  
PIN NAME  
1
2
3
G
S
D
Source  
Drain  
2
1
G
S
SOT - 23 Top View  
Equivalent Circuit  
Absolute Maximum Ratings  
■�  
O
Ta=25 C  
SYMBOL  
RATINGS  
UNITS  
V
PARAMETER  
3
Drain - Source Voltage  
Gate - Source Voltage  
Vdss  
Vgss  
Id  
20  
+ 12  
V
A
A
A
Drain Current (DC)  
Drain Current (Pulse)  
Reverse Drain Current  
1
4
1
Idp  
Idr  
Continuous Channel  
Pd  
0.5  
W
2
1
Power Dissipation (note)  
Channel Temperature  
O
Tch  
150  
C
O
Storage Temperature  
Tstg  
-55 to 150  
C
N - Channel MOS FET  
( 1 device built-in )  
( note ) : When implemented on a ceramic PCB  
458  

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