Datasheet > XP151A13COMR

XP151A13COMR

更新时间： 2024-09-19 07:56:51

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
页数	文件大小	规格书
4页	2258K
描述
20 V N-Channel Enhancement Mode MOSFET

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XP151A13COMR 数据手册

XP151A13COMR

20V N-Channel Enhancement Mode MOSFET

VDS= 20V

RDS(ON), Vgs@ 4.5V, Ids@

85m

3.6A

Ω

RDS(ON), Vgs@ 2.5V, Ids@ 2.0A

115m

Ω

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Package Dimensions

SOT-23(PACKAGE)

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

2.70

2.40

1.40

0.35

1.00

0.10

0.40

0.85

1.30

0.20

1.15

0.45

0.55

0°

10°

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current ¹⁾

±8

2.3

V_GS

I_D

I_DM

TA = 25^o

TA = 75^oC

1.25

0.8

Maximum Power Dissipation²⁾

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾

100

166

^oC/W

thJA

Junction-to-Ambient Thermal Resistance (PCB mounted) ³⁾

Notes

Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t v 5 sec.

Surface Mounted on FR4 Board.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3 4

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