Datasheet > XP151A13

XP151A13

更新时间： 2024-09-19 06:01:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	209K
描述
N-Channel Power

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中文翻译

获取价格

数据手册

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XP151A13 数据手册

SMD Type

MOSFET

N-Channel Power MOSFET

XP151A13

SOT-23

Unit: mm

■ Features

● Low on-state resistance :

+0.1

2.9_-0.1

+0.1

0.4_-0.1

RDS(on) = 0.1ΩMax ( VGS = 4.5V )

RDS(on) = 0.14ΩMax ( VGS = 2.5V )

RDS(on) = 0.25ΩMax ( VGS = 1.5V )

● Ultra high-speed switching

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

● Gate Protect Diode Built-in

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

Gate-Source Voltage

VGS

±8

Drain Current-Continuous

-Pulse

IDP

0.5

Drain Current

Maximum Power Dissipation

Thermal Resistance,Junction-to-Ambient

RθJA

TJ,TSTG

250

℃/W

℃

Operating Junction and Storage Temperature Range

- 55 to 150

* When implemented on a ceramic PCB

■ Electrical Characteristics Ta = 25℃

Parameter

Zero Gate Voltage Drain Current

Gate-Body Leakage

Symbol

Testconditons

Min

0.5

Typ

Max

Unit

IDSS

IGSS

VGS = 20V , VDS = 0V

VDS = ±8V , VGS = 0V

ID=1mA,VDS=10V

μA

±10 μA

Gate Source cutoff Voltage

Vgs(off)

1.2

0.075 0.1

0.1 0.14

VGS = 4.5V , ID =0.5A

VGS = 2.5V , ID = 0.5A

VGS = 1.5V , ID = 0.1A

ID=0.5A,VDS=10V

Drain-Source On-State Resistance

RDS(on)

0.17 0.25

4.2

Forward Transfer Adittance

Body Drain Diode Forward Voltage

Input Capacitance

|Yfs|

IF=1A,,VGS=0V

0.8

220

120

1.1

CISS

COSS

CRSS

td(on)

VDS = 10V , VGS = 0V,f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

VGS= 5V , ID = 0.5A VDD=10V

Turn-Off Delay Time

Fall Time

td(off)

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