Datasheet > XP135A1145SR_1

XP135A1145SR_1

更新时间： 2024-09-19 05:52:27

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
8页	711K
描述
Power MOSFET

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数据手册

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XP135A1145SR_1 数据手册

XP135A1145SR

ETR1116_001

Power MOSFET

■GENERAL DESCRIPTION

The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching

characteristics.

Two FET devices are built-into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance (Nch) : Rds (on) = 0.033

Rds (on) = 0.045

Low On-State Resistance (Pch) : Rds (on) = 0.065

Rds (on) = 0.110

@ Vgs = 10V

@ Vgs = 4.5V

@ Vgs = -10V

@ Vgs = -4.5V

●Cellular and portable phones

●On-board power supplies

Ultra High-Speed Switching

Driving Voltage

: 4.5V (Nch) : -4.5V (Pch)

N-Channel/P-channel Power MOSFET

DMOS Structure

Two FET Devices Built-in

Package

: SOP-8

■PIN CONFIGURATION

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

Source (Nch)

Gate (Nch)

Source (Pch)

Gate (Pch)

Drain (Pch)

Drain (Nch)

5~6

7~8

■EQUIVALENT CIRCUIT

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

RATINGS

PARAMETER

SYMBOL

UNITS

Nch

Pch

-30

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

±20 ±20

-4

-16

-4

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

Channel Power Dissipation *

Channel Temperature

Tch

150

℃

Storage Temperature Range

Tstg

-55~150

* When implemented on a glass epoxy PCB

1/8

12 3 4 5 6 7 8

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