XP1401TX

更新时间： 2024-11-08 13:16:11

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数据手册

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XP1401TX 数据手册

Composite Transistors

XP01401 (XP1401)

Silicon PNP epitaxial planar type

Unit: mm

+0.05

–0.02

0.12

For general amplification

0.20 0.05

■ Features

• Two elements incorporated into one package

(Emitter-coupled transistors)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

• 2SB0709A (2SB709A) × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Base (Tr1)

2: Emitter

3: Base (Tr2)

EIAJ: SC-88A

4: Collector (Tr2)

5: Collector (Tr1)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−60

−50

−7

SMini5-G1 Package

Collector current

I_C

I_CP

P_T

−100

−200

°C

Marking Symbol: 5V

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

Internal Connection

150

T_j

150

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−60

−50

−7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

h_FEratio ^*

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_B= 0

V_CE= −10 V, I_C= −2 mA

− 0.1

−100

460

µA



I_CEO

h_FE

160

h_FE(Small/V_CE= −10 V, I_C= −2 mA

Large)

0.50

0.99

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −100 mA, I_B= −10 mA

− 0.3 − 0.5

MHz

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

Collector output capacitance

C_ob

2.7

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00145BED

12 3 4

中文翻译

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与XP1401TX相关器件

型号	品牌	获取价格	描述	数据表
XP1501	PANASONIC	获取价格	Silicon NPN epitaxial planar type
XP1501TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
XP1504	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XP1504TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon
XP1507	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XP1507TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 2-Element, NPN, Silicon
XP151A01C3MR	TOREX	获取价格	N-Channel Power MOS FET
XP151A02B0MR	TOREX	获取价格	Power MOS FET
XP151A02BOMR	TOREX	获取价格	N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Charac
XP151A03A7MR	TOREX	获取价格	Power MOS FET

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