生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.3 A | 集电极-发射极最大电压: | 20 V |
配置: | COMMON EMITTER, 2 ELEMENTS | 最小直流电流增益 (hFE): | 500 |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 2 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
XP1507 | PANASONIC |
获取价格 |
Silicon NPN epitaxial planer transistor | |
XP1507TX | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 2-Element, NPN, Silicon | |
XP151A01C3MR | TOREX |
获取价格 |
N-Channel Power MOS FET | |
XP151A02B0MR | TOREX |
获取价格 |
Power MOS FET | |
XP151A02BOMR | TOREX |
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N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Charac | |
XP151A03A7MR | TOREX |
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Power MOS FET | |
XP151A11B0MR | TOREX |
获取价格 |
POWER MOS FET | |
XP151A11B0MR | TYSEMI |
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Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V | |
XP151A11B0MR_1 | TOREX |
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Power MOSFET | |
XP151A11B0MR_12 | TOREX |
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Power MOSFET |