Datasheet > XP151A02BOMR

XP151A02BOMR

更新时间： 2024-09-18 21:55:23

品牌	Logo	应用领域
特瑞仕 - TOREX		开关
页数	文件大小	规格书
4页	56K
描述
N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.

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数据手册

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XP151A02BOMR 数据手册

Power MOS FET

XP151A02B0MR

ꢀ Applications

ꢀꢀN-Channel Power MOS FET

ꢀꢀDMOS Structure

ꢀꢀLow On-State Resistance: 0.2Ω MAX

ꢀꢀUltra High-Speed Switching

ꢀꢀSOT-23 Package

ꢀꢀNotebook PCs

ꢀꢀCellular and portable phones

ꢀꢀOn-board power supplies

ꢀꢀLi-ion battery systems

ꢀ General Description

The XP151A02B0MR is a N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

ꢀ Features

Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V)

Rds(on)=0.32Ω(Vgs=2.5V)

Ultra high-speed switching

Operational Voltage: 2.5V

The small SOT-23 package makes high density mounting possible.

High density mounting: SOT-23

ꢀ Pin Configuration

ꢀ Pin Assignment

FUNCTION

NUMBER

NAME

Gate

Source

Drain

SOT-23

(TOP VIEW)

ꢀ Absolute Maximum Ratings

ꢀ Equivalent Circuit

Ta=25

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

±12

0.8

2.5

0.8

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

Continuous Channel

0.5

Power Dissipation (note)

N-Channel MOS FET

(1 device built-in)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

446

12 3 4

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