Datasheet > XP151A11B0MR

XP151A11B0MR

更新时间： 2024-09-19 12:31:03

品牌	Logo	应用领域
TYSEMI		二极管开关栅驱动
页数	文件大小	规格书
2页	346K
描述
Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XP151A11B0MR 数据手册

Product specification

XP151A11B0MR-G

Power MOSFET

■GENERAL DESCRIPTION

The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.

■FEATURES

■APPLICATIONS

●Notebook PCs

Low On-State Resistance : Rds(on) = 0.12

@ Vgs = 10V

@ Vgs = 4.5V

Ultra High-Speed Switching

Gate Protect Diode Built-in

Rds(on) = 0.17

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Driving Voltage

: 4.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

■PRODUCT NAMES

MARKING

PRODUCTS

XP151A11B0MR

XP151A11B0MR-G^(*)

PACKAGE

SOT-23

ORDER UNIT

3,000/Reel

SOT-23

3,000/Reel

^(*)The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

G：Gate

S：Source

D：Drain

* x represents production lot number.

■EQUIVALENT CIRCUIT

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

±20

Idp

Idr

Channel Power Dissipation *

Channel Temperature

Storage Temperature

0.5

℃

Tch

Tstg

150

-55~150

* When implemented on a ceramic PCB

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

中文翻译

下载PDF

与XP151A11B0MR相关器件

型号	品牌	获取价格	描述	数据表
XP151A11B0MR_1	TOREX	获取价格	Power MOSFET
XP151A11B0MR_12	TOREX	获取价格	Power MOSFET
XP151A11B0MR-12	TOREX	获取价格	Power MOSFET
XP151A11B0MR-G	TOREX	获取价格	Power MOSFET
XP151A11B0MR-G	TYSEMI	获取价格	Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V
XP151A12A2MR	TYSEMI	获取价格	Cellular and portable phones On-board power supplies Li-ion battery systems
XP151A12A2MR	TOREX	获取价格	Power MOS FET
XP151A12A2MR_1	TOREX	获取价格	Power MOSFET
XP151A12A2MR_12	TOREX	获取价格	Power MOSFET
XP151A12A2MR-12	TOREX	获取价格	Power MOSFET