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XP1501 PDF预览

XP1501

更新时间: 2024-09-18 21:54:15
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
3页 84K
描述
Silicon NPN epitaxial planar type

XP1501 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-88A包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:COMMON EMITTER, 2 ELEMENTS最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-G5元件数量:2
端子数量:5封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

XP1501 数据手册

 浏览型号XP1501的Datasheet PDF文件第2页浏览型号XP1501的Datasheet PDF文件第3页 
Composite Transistors  
XP01501 (XP1501)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.05  
–0.02  
0.12  
For general amplification  
0.20 0.05  
5
4
3
Features  
Two elements incorporated into one package  
(Emitter-coupled transistors)  
1
2
Reduction of the mounting area and assembly cost by one half  
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
Basic Part Number  
2SD0601A (2SD601A) × 2  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
60  
50  
7
1: Base (Tr1)  
2: Emitter  
4: Collector (Tr2)  
5: Collector (Tr1)  
V
3: Base (Tr2)  
EIAJ: SC-88A  
V
SMini5-G1 Package  
Collector current  
IC  
ICP  
PT  
100  
200  
mA  
mA  
mW  
°C  
Marking Symbol: 5R  
Peak collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
Internal Connection  
Tj  
150  
5
4
Tstg  
55 to +150  
°C  
Tr1  
Tr2  
3
1
2
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
hFE ratio *  
IC = 10 µA, IE = 0  
IC = 2 mA, IB = 0  
V
IE = 10 µA, IC = 0  
VCB = 20 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = 10 V, IC = 2 mA  
V
0.1  
100  
460  
µA  
µA  
ICEO  
hFE  
160  
hFE(Small/ VCE = 10 V, IC = 2 mA  
Large)  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 100 mA, IB = 10 mA  
0.1  
150  
3.5  
0.3  
V
MHz  
pF  
fT  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Note) The part number in the parenthesis shows conventional part number.  
Publication date: August 2003  
SJJ00146BED  
1

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