Datasheet > XP134A11A1SR_1

XP134A11A1SR_1

更新时间： 2024-09-19 03:13:59

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	435K
描述
Power MOSFET

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XP134A11A1SR_1 数据手册

XP134A11A1SR

ETR1114_001

Power MOSFET

■GENERAL DESCRIPTION

The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics

Two FET devices are built into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■FEATURES

Rds(on)=0.065

:Rds(on)=0.11Ω(Vgs=-4.5V)

Ultra High-Speed Switching

■APPLICATIONS

●Notebook PCs

Low On-State Resistance

Ω(Vgs=-10V)

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Driving Voltage

: -4.5V

P-Channel Power MOSFET

DMOS Structure

Two FET Devices Built-in

Package

: SOP-8

■PIN CONFIGURATION

■EQUIVALENT CIRCUIT

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

Source

Gate

Source

Gate

Drain

5~6

7~8

Drain

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

-30

±20

-4

Idp

Idr

-16

-4

Channel Power Dissipation *

Channel Temperature

℃

Tch

150

-55~150

Storage Temperature Range Tstg

* When implemented on a glass epoxy PCB

1/5

12 3 4 5

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