Datasheet > XP134A1275SR_1

XP134A1275SR_1

更新时间： 2024-09-19 03:13:59

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
5页	442K
描述
Power MOSFET

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XP134A1275SR_1 数据手册

XP134A1275SR

ETR1115_001

Power MOSFET

■GENERAL DESCRIPTION

The XP134A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics.

Two FET devices are built-into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■FEATURES

Low On-State Resistance

■APPLICATIONS

●Notebook PCs

Rds(on)=0.075

(Vgs=-4.5V)

Rds(on)=0.115

(Vgs=-2.5V)

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

Ultra High-Speed Switching

Driving Voltage

: -2.5V

P-Channel Power MOSFET

DMOS Structure

2 FET Devices Built-in

Package

: SOP-8

■PIN CONFIGURATION

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

Source

Gate

Source

Gate

Drain

5~6

7~8

Drain

■EQUIVALENT CIRCUIT

■

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

-20

±12

-4.5

Idp

Idr

-18

-4.5

Channel Power Dissipation *

Channel Temperature

℃

Tch

150

Storage Temperature Range Tstg

-55~150

* When implemented on a glass epoxy PCB

1/5

12 3 4 5

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