Datasheet > XP134A1275SR

XP134A1275SR

更新时间： 2024-09-18 22:34:47

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	157K
描述
P-Channel Power MOS FET

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数据手册

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XP134A1275SR 数据手册

11S_25XP134A1275SR 02.9.12 4:03 PM ページ 783

Power MOS FET

NP-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance : 0.075Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

N2 FET Devices Built-in

■General Description

■Features

The XP134A1275SR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Two FET devices are built-into the one package.

Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V )

: Rds (on) = 0.115Ω ( Vgs = -2.5V )

Ultra high-speed switching

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Operational Voltage

: -2.5V

High density mounting : SOP-8

The small SOP-8 package makes high density mounting possible.

■Pin Configuration

■Pin Assignment

１�

８�

FUNCTION

NUMBER

NAME

２�

７�

Source

Gate

３�

４�

６�

５�

Source

Gate

SOP-8�

(TOP VIEW)

5~6

7~8

Drain

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25 C

SYMBOL

RATINGS

- 20

UNITS

PARAMETER

１�

２�

８�

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

７�

６�

５�

- 4.5

- 18

- 4.5

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Idp

Idr

３�

４�

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

P-Channel MOS FET�

( 2 devices built-in )

Tstg

- 55 ~ 150

( note ) : When implemented on a glass epoxy PCB

783

12 3 4

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