Datasheet > XP133A1235SR

XP133A1235SR

更新时间： 2024-09-19 03:13:59

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	477K
描述
Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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XP133A1235SR 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
湿度敏感等级：	1	Base Number Matches：	1

XP133A1235SR 数据手册

◆N-Channel Power MOSFET

◆DMOS Structure

■APPLICATIONS

●Notebook PCs

◆Low On-State Resistance : 0.035Ω(MAX.)

◆Ultra High-Speed Switching

◆SOP-8 Package

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

◆Two FET Devices Built-in

■FEATURES

■GENERAL DESCRIPTION

The XP133A1235SR is an N-channel Power MOSFET with low

on-state resistance and ultra high-speed switching

characteristics. Two FET devices are built into the one package

Because high-speed switching is possible, the IC can be

efficiently set thereby saving energy.

Low On-State Resistance

Rds(on)=0.035

(Vgs= 4.5V)

Rds(on)=0.048

(Vgs = 2.5V)

Ultra High-Speed Switching

Driving Voltage

: 2.5V

The small SOP-8 package makes high density mounting

possible.

High Density Mounting : SOP-8

■PIN CONFIGURATION

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

Source

Gate

5~6

7~8

Source

Gate

Drain

■

ABSOLUTE MAXIMUM RATINGS

■EQUIVALENT CIRCUIT

Ta = 25℃

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

±12

Idp

Idr

Channel Power Dissipation *

Channel Temperature

℃

Tch

150

Storage Temperature Range Tstg

-55~150

* When implemented on a glass epoxy PCB

XP133A1235SR ETR1112_001.doc

1475

12 3 4

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