11S_13XP132A1275SR 02.9.12 3:55 PM ページ 735
Power MOS FET
NP-Channel Power MOS FET
NDMOS Structure
■Applications
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NLow On-State Resistance : 0.075Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
■General Description
■Features
The XP132A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V )
: Rds (on) = 0.115Ω ( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage
: -2.5V
The small SOP-8 package makes high density mounting possible.
High density mounting : SOP-8
■Pin Configuration
■Pin Assignment
1�
2�
8�
PIN NUMBER
PIN NAME
FUNCTION
S
S
D
S�
G�
D�
7�
1 ~�3
4
Source
Gate
D
3�
4�
6�
D
S
5 ~�8
Drain
5�
G
D
SOP-8�
(TOP VIEW)�
■Equivalent Circuit
■Absolute Maximum Ratings Ta=25 C
O
11
SYMBOL
RATINGS
UNITS
PARAMETER
1�
2�
8�
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Vdss
Vgss
Id
-20
V
V
A
+
12
7�
-5
-20
-5
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Idp
Idr
Pd
A
A
3�
4�
6�
5�
2.5
W
Power Dissipation (note)
Channel Temperature
Storage Temperature
O
C
Tch
150
P-Channel MOS FET�
( 1 device built-in )
O
C
Tstg
-55 ~ 150
( note ) : When implemented on a glass epoxy PCB
735