Datasheet > XP133A1145SR

XP133A1145SR

更新时间： 2024-11-07 21:53:23

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	161K
描述
Power MOS FET

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数据手册

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XP133A1145SR 数据手册

11S_19XP133A1145SR 02.9.12 3:59 PM ページ 759

Power MOS FET

NN-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance: 0.045Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

NTwo FET Devices Built-in

■General Description

■Features

The XP133A1145SR is an N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Two FET devices are built into the one package.

Low on-state resistance : Rds(on)=0.033Ω (Vgs=10V)

: Rds(on)=0.045Ω (Vgs=4.5V)

Ultra high-speed switching

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Operational Voltage

: 4.5V

High density mounting : SOP-8

The small SOP-8 package makes high density mounting possible.

■Pin Configuration

■Pin Assignment

１�

８�

FUNCTION

NUMBER

NAME

２�

７�

Source

Gate

３�

４�

６�

５�

Source

Gate

SOP-8�

(TOP VIEW)

5~6

7~8

Drain

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25°C

PARAMETER

SYMBOL

RATINGS

UNITS

１�

２�

８�

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

７�

３�

４�

６�

５�

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

N-Channel MOS FET�

(2 devices built-in)

Continuous Channel

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

°C

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

759

12 3 4

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