Datasheet > XP132A11A1SR

XP132A11A1SR

更新时间： 2024-09-18 22:11:19

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	62K
描述
Power MOS FET

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中文翻译

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技术参数
数据手册

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XP132A11A1SR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	湿度敏感等级：	1
Base Number Matches：	1

XP132A11A1SR 数据手册

Power MOS FET

XP132A11A1SR

◆�P-Channel Power MOS FET

◆�DMOS Structure

■�Applications

●�Notebook PCs

●�Cellular and portable phones

●�On - board power supplies

●�Li - ion battery systems

◆�Low On-State Resistance : 0.11

◆�Ultra High-Speed Switching

◆�SOP - 8 Package

Ω

(max)

■�General Description

■�Features

The XP132A11A1SR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently

set thereby saving energy.

Rds (on) = 0.065 ( Vgs = -10V )

Low on-state resistance :

Ω

Rds (on) = 0.11Ω ( Vgs = -4.5V )

Ultra high-speed switching

Operational Voltage :

-4.5V

The small SOP-8 package makes high density mounting possible.

SOP - 8

High density mounting :

■�Pin Configuration

■�Pin Assignment

FUNCTION

Source

Gate

PIN NUMBER

PIN NAME

1 - 3

5 - 8

Drain

SOP - 8 Top View

■�Equivalent Circuit

■�Absolute Maximum Ratings

Ta=25 C

SYMBOL

RATINGS

UNITS

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

- 30

+ 20

- 5

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Idp

Idr

- 20

- 5

2.5

Channel Temperature

Storage Temperature

Tch

150

Tstg

- 55 to 150

P - Channel MOS FET

( 1 device built-in )

( note ) : When implemented on a glass epoxy PCB

385

12 3 4

中文翻译

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