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XP01504 PDF预览

XP01504

更新时间: 2024-09-18 22:11:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
2页 36K
描述
Silicon NPN epitaxial planer transistor

XP01504 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-88A包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:20 V配置:COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE):500JESD-30 代码:R-PDSO-G5
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

XP01504 数据手册

 浏览型号XP01504的Datasheet PDF文件第2页 
Composite Transistors  
XP1504  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For amplification of low frequency output  
2.1±0.1  
1.25±0.1  
0.425  
0.425  
Features  
5
1
Two elements incorporated into one package.  
(Emitter-coupled transistors)  
Reduction of the mounting area and assembly cost by one half.  
2
3
4
Basic Part Number of Element  
2SD1938 × 2 elements  
0.2±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
1 : Base (Tr1)  
2 : Emitter  
3 : Base (Tr2)  
4 : Collector (Tr2)  
5 : Collector (Tr1)  
EIAJ : SC–88A  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
S–Mini Type Package (5–pin)  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Total power dissipation  
50  
20  
V
Rating  
of  
element  
Marking Symbol: 5S  
Internal Connection  
25  
V
300  
mA  
mA  
mW  
˚C  
ICP  
500  
Tr1  
1
5
4
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
2
Tstg  
–55 to +150  
˚C  
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCEO  
Conditions  
min  
typ  
max  
Unit  
V
Collector to emitter voltage  
Collector cutoff current  
Emitter cutoff current  
IC = 1mA, IB = 0  
20  
ICBO  
IEBO  
hFE  
VCB = 50V, IE = 0  
0.1  
0.1  
µA  
µA  
VEB = 25V, IC = 0  
Forward current transfer ratio  
VCE = 2V, IC = 4mA  
500  
2500  
0.1  
Collector to emitter saturation voltage VCE(sat)  
IC = 30mA, IB = 3mA  
VCE = 2V, IC = 4mA  
V
V
Base to emitter voltage  
Transition frequency  
Collector output capacitance  
ON Resistance  
VBE  
fT  
0.6  
80  
VCB = 6V, IE = –4mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
MHz  
pF  
Cob  
7
*1  
Ron  
1.0  
*1  
1k  
R
on  
measuring circuit  
IB=1mA  
f=1kHz  
V=0.3V  
VB  
VA  
VV  
VB  
Ron=  
1000()  
VA–VB  
1

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