Datasheet > XP01531

XP01531

更新时间： 2024-09-18 22:11:19

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
2页	35K
描述
Silicon NPN epitaxial planer transistor

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XP01531 数据手册

Composite Transistors

XP01531

Silicon NPN epitaxial planer transistor

Unit: mm

For high frequency, oscillation and mixing

2.1±0.1

1.25±0.1

0.425

Features

■

●

Two elements incorporated into one package.

(Emitter-coupled transistors)

Reduction of the mounting area and assembly cost by one half.

●

Basic Part Number of Element

2SC3130 × 2 elements

■

●

0.2±0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Base (Tr1)

2 : Emitter

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Collector (Tr1)

EIAJ : SC–88A

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

S–Mini Type Package (5–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Total power dissipation

Rating

element

Marking Symbol: 9F

Internal Connection

˚C

P_T

150

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CEO

Conditions

min

typ

max

Unit

Collector to emitter voltage

Emitter to base voltage

I_C= 2mA, I_B= 0

V_EBO

I_CBO

I_CEO

h_FE

I_E= 10µA, I_C= 0

V_CB= 10V, I_E= 0

µA

Collector cutoff current

V_CE= 10V, I_B= 0

Forward current transfer ratio

V_CE= 4V, I_C= 5mA

200

400

0.5

2.5

1.1

13.5

0.35

Collector to emitter saturation voltage V_CE(sat)

I_C= 20mA, I_B= 4mA

GHz

Transition frequency

f_T

V_CB= 4V, I_E= –5mA, f = 200MHz

V_CB= 4V, I_E= 0, f = 1MHz

V_CB= 4V, I_E= –5mA, f = 31.9MHz

V_CB= 4V, I_E= 0, f = 1MHz

1.4

1.9

0.9

Collector output capacitance

Collector to base parameter

C_ob

r_bb'·C_C

11.8

0.25

Common base reverse transfer capacitance C_rb

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