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XP02211 PDF预览

XP02211

更新时间: 2024-11-07 23:33:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 64K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-353

XP02211 数据手册

 浏览型号XP02211的Datasheet PDF文件第2页浏览型号XP02211的Datasheet PDF文件第3页 
Composite Transistors  
XP02211 (XP2211)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For switching/digital circuits  
2.1 0.1  
1.25 0.1  
0.425  
0.425  
Features  
I
5
1
G
Two elements incorporated into one package.  
(Base-coupled transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
2
3
4
G
Basic Part Number of Element  
UNR1211(UN1211) × 2 elements  
I
G
0.2 0.1  
Absolute Maximum Ratings (Ta=25˚C)  
1 : Emitter (Tr1)  
2 : Base  
3 : Emitter (Tr2)  
4 : Collector (Tr2)  
5 : Collector (Tr1)  
EIAJ : SC–88A  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
S–Mini Type Package (5–pin)  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
50  
50  
Rating  
V
of  
Marking Symbol: 9O  
Internal Connection  
element  
100  
mA  
mW  
˚C  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
1
5
4
Tstg  
–55 to +150  
˚C  
2
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
Conditions  
min  
50  
typ  
max  
Unit  
V
Collector to base voltage  
IC = 10µA, IE = 0  
Collector to emitter voltage  
VCEO  
ICBO  
ICEO  
IEBO  
hFE  
IC = 2mA, IB = 0  
VCB = 50V, IE = 0  
VCE = 50V, IB = 0  
VEB = 6V, IC = 0  
VCE = 10V, IC = 5mA  
50  
V
0.1  
0.5  
0.5  
µA  
µA  
mA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Forward current transfer hFE ratio  
35  
hFE (small/large)*1 VCE = 10V, IC = 5mA  
0.5  
0.99  
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 0.3mA  
0.25  
0.2  
V
V
Output voltage high level  
Output voltage low level  
Transition frequency  
Input resistance  
VOH  
VOL  
fT  
VCC = 5V, VB = 0.5V, RL = 1kΩ  
VCC = 5V, VB = 2.5V, RL = 1kΩ  
VCB = 10V, IE = –2mA, f = 200MHz  
4.9  
V
150  
10  
MHz  
kΩ  
R1  
–30%  
0.8  
+30%  
1.2  
Resistance ratio  
R1/R2  
1.0  
*1 Ratio between 2 elements  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

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