Composite Transistors
XP02211 (XP2211)
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.1 0.1
1.25 0.1
0.425
0.425
Features
I
5
1
G
Two elements incorporated into one package.
(Base-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2
3
4
G
Basic Part Number of Element
UNR1211(UN1211) × 2 elements
I
G
0.2 0.1
Absolute Maximum Ratings (Ta=25˚C)
1 : Emitter (Tr1)
2 : Base
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
I
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
S–Mini Type Package (5–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
50
50
Rating
V
of
Marking Symbol: 9O
Internal Connection
element
100
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCBO
Conditions
min
50
typ
max
Unit
V
Collector to base voltage
IC = 10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
50
V
0.1
0.5
0.5
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
35
hFE (small/large)*1 VCE = 10V, IC = 5mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
V
150
10
MHz
kΩ
R1
–30%
0.8
+30%
1.2
Resistance ratio
R1/R2
1.0
*1 Ratio between 2 elements
Note.) The Part number in the Parenthesis shows conventional part number.
1