Datasheet > XP04111(XP4111)

XP04111(XP4111)

更新时间： 2024-09-18 23:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	50K
描述
Composite Device - Composite Transistors

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数据手册

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XP04111(XP4111) 数据手册

Composite Transistors

XP04111 (XP4111)

Silicon PNP epitaxial planer transistor

Unit: mm

+0.05

–0.02

0.12

For switching/digital circuits

0.2±0.05

Features

■

Two elements incorporated into one package.

(Transistors with built-in resistor)

(0.65) (0.65)

■

Reduction of the mounting area and assembly cost by one half.

1.3±0.1

2.0±0.1

10°

Basic Part Number of Element

UNR1111(UN1111) × 2 elements

■

1 : Emitter (Tr1)

2 : Base (Tr1)

3 : Collector (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88

4 : Emitter (Tr2)

5 : Base (Tr2)

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

SMini6-G1 Package

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

element

–50

Marking Symbol: 9U

Internal Connection

–100

˚C

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

–50

typ

max

Unit

Collector to base voltage

I_C= –10µA, I_E= 0

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= –2mA, I_B= 0

V_CB= –50V, I_E= 0

– 0.1

– 0.5

µA

Collector cutoff current

V_CE= –50V, I_B= 0

Emitter cutoff current

V_EB= –6V, I_C= 0

Forward current transfer ratio

V_CE= –10V, I_C= –5mA

I_C= –10mA, I_B= – 0.3mA

V_CC= –5V, V_B= – 0.5V, R_L= 1kΩ

V_CC= –5V, V_B= –2.5V, R_L= 1kΩ

V_CB= –10V, I_E= 1mA, f = 200MHz

Collector to emitter saturation voltage V_CE(sat)

– 0.25

–

Output voltage high level

Output voltage low level

Transition frequency

Input resistance

V_OH

V_OL

f_T

–4.9

0.2V

MHz

R₁

–30%

0.8

+30%

1.2

kΩ

Resistance ratio

R₁/R₂

1.0

Note) The Part number in the Parenthesis shows conventional part number.

12 3

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