Datasheet > XP04112

XP04112

更新时间： 2024-11-07 22:11:19

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
2页	35K
描述
Silicon PNP epitaxial planer transistor

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中文翻译

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数据手册

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XP04112 数据手册

Composite Transistors

XP4112

Silicon PNP epitaxial planer transistor

Unit: mm

For switching/digital circuits

2.1±0.1

0.425

1.25±0.1

0.425

Features

■

●

Two elements incorporated into one package.

(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UN1112 × 2 elements

■

●

0.2±0.1

1 : Emitter (Tr1)

2 : Base (Tr1)

3 : Collector (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88

4 : Emitter (Tr2)

5 : Base (Tr2)

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

S–Mini Type Package (6–pin)

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

element

–50

Marking Symbol: 6R

Internal Connection

–100

˚C

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

I_C= –10µA, I_E= 0

–50

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= –2mA, I_B= 0

V_CB= –50V, I_E= 0

– 0.1

– 0.5

– 0.2

µA

Collector cutoff current

V_CE= –50V, I_B= 0

Emitter cutoff current

V_EB= –6V, I_C= 0

Forward current transfer ratio

V_CE= –10V, I_C= –5mA

I_C= –10mA, I_B= – 0.3mA

V_CC= –5V, V_B= – 0.5V, R_L= 1kΩ

V_CC= –5V, V_B= –2.5V, R_L= 1kΩ

V_CB= –10V, I_E= 1mA, f = 200MHz

Collector to emitter saturation voltage V_CE(sat)

– 0.25

– 0.2

Output voltage high level

Output voltage low level

Transition frequency

Input resistance

V_OH

V_OL

f_T

–4.9

MHz

kΩ

R₁

–30%

0.8

+30%

1.2

Resistance ratio

R₁/R₂

1.0

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