Datasheet > XP04116|XP4116

XP04116|XP4116

更新时间： 2024-11-07 23:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	85K
描述
Composite Device - Composite Transistors

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中文翻译

获取价格

数据手册

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XP04116|XP4116 数据手册

Composite Transistors

XP04116 (XP4116)

Silicon PNP epitaxial planar type

Unit: mm

+0.05

0.12

–0.02

For switching/digital circuits

0.2 ^0.05

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

10˚

•

UNR2116 (UN2116) × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−50

Unit

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ : SC-88

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

SMini6-G1 Package

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

T_j

−100

°C

Marking Symbol: 6U

Total power dissipation

Junction temperature

Storage temperature

150

Internal Connection

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

V_CE= −10 V, I_C= −5 mA

− 0.1

− 0.5

− 0.01

460

µA



I_CEO

I_EBO

h_FE

160

−4.9

V_CE(sat)I_C= −10 mA, I_B= − 0.3 mA

− 0.25

V_OH

V_OL

R₁

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ

Output voltage low-level

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

− 0.2

Input resistance

−30%

4.7

+30%

kΩ

MHz

Transition frequency

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00166BED

12 3

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