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XP04286 PDF预览

XP04286

更新时间: 2024-11-07 22:11:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
4页 51K
描述
Silicon NPN(PNP) epitaxial planer transistor

XP04286 数据手册

 浏览型号XP04286的Datasheet PDF文件第2页浏览型号XP04286的Datasheet PDF文件第3页浏览型号XP04286的Datasheet PDF文件第4页 
Composite Transistors  
XP04286  
Silicon NPN epitaxial planer transistor (Tr1)  
Silicon PNP epitaxial planer transistor (Tr2)  
Unit: mm  
For switching/digital circuits  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
1
6
Features  
Two elements incorporated into one package.  
(Transistors with built-in resistor)  
2
3
5
4
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
UN221N+UN1119  
0.2±0.1  
1 : Emitter (Tr1)  
2 : Base (Tr1)  
3 : Collector (Tr2) 6 : Collector (Tr1)  
EIAJ : SC–88  
4 : Emitter (Tr2)  
5 : Base (Tr2)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
50  
Unit  
V
S–Mini Type Package (6–pin)  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
Tr1  
50  
V
Marking Symbol: HO  
Internal Connection  
100  
mA  
V
VCBO  
VCEO  
IC  
–50  
Tr2  
–50  
V
Tr1  
1
2
3
6
5
4
–100  
150  
mA  
mW  
˚C  
PT  
Overall  
Tj  
150  
Tr2  
Tstg  
–55 to +150  
˚C  
1

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