Datasheet > XP04506

XP04506

更新时间： 2024-09-18 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	65K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| SOT-363

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中文翻译

获取价格

数据手册

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XP04506 数据手册

Composite Transistors

XP04506 (XP4506)

Silicon NPN epitaxial planer transistor

Unit: mm

For amplification of low frequency output

2.1 0.1

0.425

1.25 0.1

0.425

Features

High emitter to base voltage V_EBO

High forward current transfer ratio h_FE

Low ON resistor R_on.

ꢀ

ꢁ

Basic Part Number of Element

2SD1915F × 2 elements

ꢀ

ꢁ

0.2 0.1

1 : Emitter (Tr1)

2 : Base (Tr1)

3 : Collector (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88

4 : Emitter (Tr2)

5 : Base (Tr2)

Absolute Maximum Ratings (Ta=25˚C)

ꢀ

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

S–Mini Type Package (6–pin)

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

Marking Symbol: EN

Internal Connection

Rating

element

300

˚C

I_CP

500

Tr1

P_T

150

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

ꢀ

Parameter

Symbol

V_CEO

Conditions

min

typ

max

Unit

Collector to emitter voltage

Collector cutoff current

Emitter cutoff current

I_C= 1mA, I_B= 0

I_CBO

I_EBO

h_FE

V_CB= 50V, I_E= 0

0.1

µA

V_EB= 25V, I_C= 0

Forward current transfer ratio

Base to emitter voltage

V_CE= 2V, I_C= 4mA

500

2500

V_BE

V_CE= 2V, I_C= 4mA

0.6

Collector to emitter saturation voltage V_CE(sat)

I_C= 30mA, I_B= 3mA

V_CB= 6V, I_E= –4mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

0.1

Transition frequency

Collector output capacitance

ON Resistance

f_T

MHz

C_ob

R_on

Ω

measuring circuit

1kΩ

I_B=1mA

f=1kHz

V=0.3V

V_B

V_A

V_V

V_B

R_on=

✕1000(Ω)

V_A–V_B

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

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与XP04506相关器件

型号	品牌	获取价格	描述	数据表
XP04506(XP4506)	ETC	获取价格	Composite Device - Composite Transistors
XP04601	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XP04601(XP4601)	ETC	获取价格	複合デバイス－複合トランジスタ
XP04601\|XP4601	ETC	获取价格	Composite Device - Composite Transistors
XP04654	PANASONIC	获取价格	Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
XP04654(XP4654)	ETC	获取价格	複合デバイス－複合トランジスタ
XP04654\|XP4654	ETC	获取价格	Composite Device - Composite Transistors
XP04683	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 20V V(BR)CEO \| 15MA I(C) \| SOT-363
XP04683(XP4683)	ETC	获取价格	Composite Device - Composite Transistors
XP04683\|XP4683	ETC	获取价格	Composite Device - Composite Transistors