Datasheet > XP05501

XP05501

更新时间： 2024-11-29 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 50V V(BR)CEO \| 100MA I(C) \| SOT-363

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中文翻译

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数据手册

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XP05501 数据手册

Composite Transistors

XP05501 (XP5501)

Silicon NPN epitaxial planer transistor

Unit: mm

For general amplification

2.1 0.1

0.425

1.25 0.1

0.425

Features

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SD0601A(2SD601A) × 2 elements

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Emitter (Tr1)

2 : Base (Tr1)

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Emitter (Tr2)

6 : Collector (Tr1)

EIAJ : SC–88

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

S–Mini Type Package (6–pin)

Rating

Marking Symbol: 5L

Internal Connection

element

100

˚C

I_CP

200

P_T

150

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_CBO

I_CEO

h_FE

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

V_CB= 20V, I_E= 0

V_CE= 10V, I_B= 0

V_CE= 10V, I_C= 2mA

0.1

100

460

µA

Collector cutoff current

Forward current transfer ratio

160

0.5

Forward current transfer h_FEratio

h_FE(small/large)^*1V_CE= 10V, I_C= 2mA

0.99

0.1

Collector to emitter saturation voltage V_CE(sat)

I_C= 100mA, I_B= 10mA

0.3

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –2mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

150

3.5

Collector output capacitance

C_ob

^*1Ratio between 2 elements

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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与XP05501相关器件

型号	品牌	获取价格	描述	数据表
XP05501(XP5501)	ETC	获取价格	複合デバイス－複合トランジスタ
XP05501\|XP5501	ETC	获取价格	Composite Device - Composite Transistors
XP05531	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XP05534	ETC	获取价格	複合デバイス－複合トランジスタ
XP05543	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, L Band, Silicon, NPN, SC-88, 6
XP05553	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon, ROHS
XP05553(XP5553)	ETC	获取价格	複合デバイス－複合トランジスタ
XP05553\|XP5553	ETC	获取价格	Composite Device - Composite Transistors
XP05554	PANASONIC	获取价格	Silicon NPN epitaxial planer transistor
XP05555	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 200MA I(C) \| SOT-363