Composite Transistors
XP05555 (XP5555)
Silicon NPN epitaxial planer transistor
Unit: mm
For high speed switching
2.1 0.1
0.425
1.25 0.1
0.425
1
6
Features
I
G
2
3
5
4
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
G
Basic Part Number of Element
2SC4782 × 2 elements
I
G
0.2 0.1
Absolute Maximum Ratings (Ta=25˚C)
I
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC–88
Parameter
Symbol
VCBO
VCES
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
25
S–Mini Type Package (6–pin)
20
5
V
Rating
V
of
Marking Symbol: EO
Internal Connection
element
200
mA
mA
mW
˚C
ICP
300
PT
150
Tr1
1
6
5
4
Overall Junction temperature
Storage temperature
Tj
150
2
Tstg
–55 to +150
˚C
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
min
typ
max
0.1
0.1
200
0.25
1.0
500
4
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 10V, IE = 0
VEB = 4V, IC = 0
µA
Forward current transfer ratio
VCE = 1V, IC = 10mA
40
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 10mA, IB = 1mA
0.17
0.76
200
2
V
V
IC = 10mA, IB = 1mA
Transition frequency
Collector output capacitance
Turn-on time
fT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
MHz
pF
ns
Cob
ton
toff
tstg
17
*1
Turn-off time
15
ns
Storage time
7
ns
*1 Switching time measuring circuit
Note.) The Part number in the Parenthesis shows conventional part number.
1